EUV and optical lithographic pattern shift at the 5nm node

Erik R. Hosler; Sathish Thiruvengadam; Jason R. Cantone; Deniz E. Civay; Uwe Paul Schroeder

doi:10.1117/12.2217532

18 March 2016 EUV and optical lithographic pattern shift at the 5nm node

Erik R. Hosler, Sathish Thiruvengadam, Jason R. Cantone, Deniz E. Civay, Uwe Paul Schroeder

Proceedings Volume 9776, Extreme Ultraviolet (EUV) Lithography VII; 977616 (2016) https://doi.org/10.1117/12.2217532
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

At the 5 nm technology node there are competing strategies for patterning: high-NA EUV, double patterning 0.33 NA EUV and a combination of optical self-aligned solutions with EUV. This paper investigates the impact of pattern shift based on the selected patterning strategy. A logic standard cell connection between TS and M0 is simulated to determine the impact of lithographic pattern shift on the overlay budget. At 5 nm node dimensions, high-NA EUV is necessary to expose the most critical layers with a single lithography exposure. The impact of high-NA EUV lithography is illustrated by comparing the pattern shift resulting from 0.33 NA vs. 0.5x NA. For the example 5 nm transistor, cost-beneficial lithography layers are patterned with EUV and the other layers are patterned optically. Both EUV and optical lithography simulations are performed to determine the maximum net pattern shift. Here, lithographic pattern shift is quantified in terms of through-focus error as well as pattern-placement error. The overlay error associated with a hybrid optical/self-aligned and EUV cut patterning scheme is compared with the results of an all EUV solution, providing an assessment of two potential patterning solutions and their impact the overall overlay budget.

Citation Download Citation

Erik R. Hosler, Sathish Thiruvengadam, Jason R. Cantone, Deniz E. Civay, and Uwe Paul Schroeder "EUV and optical lithographic pattern shift at the 5nm node", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 977616 (18 March 2016); https://doi.org/10.1117/12.2217532

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available