Deep ultraviolet light-emitting and laser diodes

Asif Khan; Fatima Asif; Sakib Muhtadi

doi:10.1117/12.2217738

26 February 2016 Deep ultraviolet light-emitting and laser diodes

Asif Khan, Fatima Asif, Sakib Muhtadi

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Proceedings Volume 9748, Gallium Nitride Materials and Devices XI; 97481J (2016) https://doi.org/10.1117/12.2217738
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

Nearly all the air-water purification/polymer curing systems and bio-medical instruments require 250-300 nm wavelength ultraviolet light for which mercury lamps are primarily used. As a potential replacement for these hazardous mercury lamps, several global research teams are developing AlGaN based Deep Ultraviolet (DUV) light emitting diodes (LEDs) and DUV LED Lamps and Laser Diodes over Sapphire and AlN substrates. In this paper, we review the current research focus and the latest device results. In addition to the current results we also discuss a new quasipseudomorphic device design approach. This approach which is much easier to integrate in a commercial production setting was successfully used to demonstrate UVC devices on Sapphire substrates with performance levels equal to or better than the conventional relaxed device designs.

Citation Download Citation

Asif Khan, Fatima Asif, and Sakib Muhtadi "Deep ultraviolet light-emitting and laser diodes", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97481J (26 February 2016); https://doi.org/10.1117/12.2217738

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KEYWORDS

Light emitting diodes

Sapphire

Aluminum nitride

Deep ultraviolet

Lamps

Superlattices

Doping

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