Detailed analysis on the responsivity of InP/InGaAs HPTs for near-IR optoelectronic applications

Jiabing Lv; Jun Chen; Min Zhu

doi:10.1117/12.2201033

15 October 2015 Detailed analysis on the responsivity of InP/InGaAs HPTs for near-IR optoelectronic applications

Jiabing Lv, Jun Chen, Min Zhu

Proceedings Volume 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology; 96742E (2015) https://doi.org/10.1117/12.2201033
Event: Applied Optics and Photonics China (AOPC2015), 2015, Beijing, China

Abstract

In this letter, we analyzed an analytical spectral response(SR) model for a near-infrared(NIR) heterojuction phototransistor (HPT) with the purpose of understanding the behavior of lattice-matched In_0.53Ga_0.47As/InP HPT achieving the current gain with changing device and material parameters. The responsivity of the model we designed leads to a good agreement between theoretical and experimental results for the incident wavelength radiations at 980, 1310, and 1550nm, the responsivity is developed from the solution of continuity equations that dominate the excess optically generated minority-carriers in the active layers of the HPT with boundary conditions.

Citation Download Citation

Jiabing Lv, Jun Chen, and Min Zhu "Detailed analysis on the responsivity of InP/InGaAs HPTs for near-IR optoelectronic applications", Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 96742E (15 October 2015); https://doi.org/10.1117/12.2201033

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