Circuit modeling based optimization of high speed carrier depletion silicon modulators

Seyedreza Hosseini; Kambiz Jamshidi

doi:10.1117/12.2178603

1 May 2015 Circuit modeling based optimization of high speed carrier depletion silicon modulators

Seyedreza Hosseini, Kambiz Jamshidi

Author Affiliations +

Proceedings Volume 9516, Integrated Optics: Physics and Simulations II; 95160N (2015) https://doi.org/10.1117/12.2178603
Event: SPIE Optics + Optoelectronics, 2015, Prague, Czech Republic

Abstract

Simple RC model, which only considered PN junction capacitance and series resistor, and complete circuit model considering parasitic capacitances of a carrier depletion based optical modulators are studied. Modulation efficiency and bandwidth of the modulators are investigated using analytical models and numerical simulations respectively. Through particle swarm optimization (PSO) a repetitive algorithm is applied to find the feasible maximum of circuit bandwidth.

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Seyedreza Hosseini and Kambiz Jamshidi "Circuit modeling based optimization of high speed carrier depletion silicon modulators ", Proc. SPIE 9516, Integrated Optics: Physics and Simulations II, 95160N (1 May 2015); https://doi.org/10.1117/12.2178603

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