Hot spots prediction after etching process based on defect rate

Taiki Kimura; Yuki Watanabe; Toshiya Kotani

doi:10.1117/12.2085726

26 March 2015 Hot spots prediction after etching process based on defect rate

Taiki Kimura, Yuki Watanabe, Toshiya Kotani

Proceedings Volume 9426, Optical Microlithography XXVIII; 942610 (2015) https://doi.org/10.1117/12.2085726
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

A resist cross-sectional profile becomes worse as feature sizes shrink. The bad resist profile could result in a hotspot after etching process (after-etch hotspot). Conventional simulation method is difficult to detect such hotspots accurately because it does not consider process variation. In this paper, we propose an accurate after-etch hotspot detection methodology with consideration of process variation based on optical intensity and defect rate. An experimental result shows our method can detect an after-etch hotspot accurately.

Citation Download Citation

Taiki Kimura, Yuki Watanabe, and Toshiya Kotani "Hot spots prediction after etching process based on defect rate", Proc. SPIE 9426, Optical Microlithography XXVIII, 942610 (26 March 2015); https://doi.org/10.1117/12.2085726

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