Numerical study of current spreading and light extraction in deep UV light-emitting diode

Xinhui Chen; Yuh-Renn Wu

doi:10.1117/12.2078752

9 March 2015 Numerical study of current spreading and light extraction in deep UV light-emitting diode

Xinhui Chen, Yuh-Renn Wu

Proceedings Volume 9383, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX; 93830Q (2015) https://doi.org/10.1117/12.2078752
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

The current crowding effect in AlGaN 275 nm deep UVLEDs has been investigated by using 2D drift diffusion solver and the Monte Carlo ray-tracing method. Optimized conditions for both lateral and vertical structure have been presented in this paper by changing the spacing between 2 fingers. To improve the light extraction efficiency, using graphene as the contact layer and removing the p-GaN layer have also been discussed here. Thus with the markable increasing of LEE, the external quantum efficiency can be improved to 37.8% in the textured vertical structure without p-GaN layer.

Citation Download Citation

Xinhui Chen and Yuh-Renn Wu "Numerical study of current spreading and light extraction in deep UV light-emitting diode", Proc. SPIE 9383, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX, 93830Q (9 March 2015); https://doi.org/10.1117/12.2078752

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