>8W GaInNAs VECSEL emitting at 615 nm

Tomi Leinonen; Jussi-Pekka Penttinen; Ville-Markus Korpijärvi; Emmi Kantola; Mircea Guina

doi:10.1117/12.2079162

4 March 2015 >8W GaInNAs VECSEL emitting at 615 nm

Tomi Leinonen, Jussi-Pekka Penttinen, Ville-Markus Korpijärvi, Emmi Kantola, Mircea Guina

Author Affiliations +

Proceedings Volume 9349, Vertical External Cavity Surface Emitting Lasers (VECSELs) V; 934909 (2015) https://doi.org/10.1117/12.2079162
Event: SPIE LASE, 2015, San Francisco, California, United States

Abstract

We report a high-power VECSEL emitting <8W around 615 nm. The gain chip of the laser was grown by plasmaassisted molecular beam epitaxy and it comprised 10 GaInNAs quantum wells. The VECSEL cavity had a V-shaped geometry and a 10-mm-long non-critically phase-matched LBO crystal for second harmonic generation. The cavity incorporated also an etalon and a birefringent filter for controlling the output wavelength. With the aid of the secondharmonic output and the infrared light leaking out from the laser cavity, the single-pass conversion efficiency of the crystal was estimated to have a value of 0.75%.

Citation Download Citation

Tomi Leinonen, Jussi-Pekka Penttinen, Ville-Markus Korpijärvi, Emmi Kantola, and Mircea Guina ">8W GaInNAs VECSEL emitting at 615 nm", Proc. SPIE 9349, Vertical External Cavity Surface Emitting Lasers (VECSELs) V, 934909 (4 March 2015); https://doi.org/10.1117/12.2079162

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