Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers

Pier J. A. Sazio; Justin R. Sparks; Rongrui He; Mahesh Krishnamurthi; Thomas C. Fitzgibbons; Subhasis Chaudhuri; Neil F. Baril; Anna C. Peacock; Noel Healy; Venkatraman Gopalan; John V. Badding

doi:10.1117/12.2083045

20 February 2015 Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers

Pier J. A. Sazio, Justin R. Sparks, Rongrui He, Mahesh Krishnamurthi, Thomas C. Fitzgibbons, Subhasis Chaudhuri, Neil F. Baril, Anna C. Peacock, Noel Healy, Venkatraman Gopalan, John V. Badding

Author Affiliations +

Proceedings Volume 9342, Solid State Lasers XXIV: Technology and Devices; 93420A (2015) https://doi.org/10.1117/12.2083045
Event: SPIE LASE, 2015, San Francisco, California, United States

Abstract

ZnSe and other zinc chalcogenide semiconductor materials can be doped with divalent transition metal ions to create a mid-IR laser gain medium with active function in the wavelength range 2 - 5 microns and potentially beyond using frequency conversion. As a step towards fiberized laser devices, we have manufactured ZnSe semiconductor fiber waveguides with low (less than 1dB/cm at 1550nm) optical losses, as well as more complex ternary alloys with ZnSxSe(1-x) stoichiometry to potentially allow for annular heterostructures with effective and low order mode corecladding waveguiding.

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Pier J. A. Sazio, Justin R. Sparks, Rongrui He, Mahesh Krishnamurthi, Thomas C. Fitzgibbons, Subhasis Chaudhuri, Neil F. Baril, Anna C. Peacock, Noel Healy, Venkatraman Gopalan, and John V. Badding "Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers", Proc. SPIE 9342, Solid State Lasers XXIV: Technology and Devices, 93420A (20 February 2015); https://doi.org/10.1117/12.2083045

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