The defect printability study for 28nm mode mask

Catherine Ren; Eric Guo; Irene Shi; Eric Tian

doi:10.1117/12.2066099

8 October 2014 The defect printability study for 28nm mode mask

Catherine Ren, Eric Guo, Irene Shi, Eric Tian

Author Affiliations +

Proceedings Volume 9235, Photomask Technology 2014; 923523 (2014) https://doi.org/10.1117/12.2066099
Event: SPIE Photomask Technology, 2014, Monterey, California, United States

Abstract

For the volume mask production of 28nm node and beyond, the defect disposition is an important factor for mask process, due to the scaling feature sizes and advanced resolution enhancement technologies. In this paper, the series of specifications for different mask patterns have been established from the defect printability study through the behaviors of programmed defects with varies types and sizes on mask, AIMS and wafer. The defect disposition to qualify the mask defects and verify the defect repair proceeds on the basis of the defect printability study. It is found that the defect specification is an effective and industrialized approach for mask production.

Citation Download Citation

Catherine Ren, Eric Guo, Irene Shi, and Eric Tian "The defect printability study for 28nm mode mask", Proc. SPIE 9235, Photomask Technology 2014, 923523 (8 October 2014); https://doi.org/10.1117/12.2066099

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE