Paper
7 October 2014 Analysis of local charge-carrier diffusion length values in the photosensing film of photovoltaic HgCdTe FPA photodetectors
Alexei V. Vishnyakov, Victor A. Stuchinsky, Dmitry V. Brunev, Alexei V. Zverev, Sergey A. Dvoretsky
Author Affiliations +
Abstract
Two-dimensional diffusion model was used to analyze the charge-carrier diffusion process in the photosensitive film of photovoltaic HgCdTe IR FPA detectors with a continuous (without mesa-isolation of pixels) absorber layer. Some applications of the model and its inaccuracies are considered. Estimates of the local charge-carrier diffusion length values in the FPA regions under and outside photodiodes were obtained on the basis of spot-scan data.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexei V. Vishnyakov, Victor A. Stuchinsky, Dmitry V. Brunev, Alexei V. Zverev, and Sergey A. Dvoretsky "Analysis of local charge-carrier diffusion length values in the photosensing film of photovoltaic HgCdTe FPA photodetectors", Proc. SPIE 9220, Infrared Sensors, Devices, and Applications IV, 92200W (7 October 2014); https://doi.org/10.1117/12.2061573
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KEYWORDS
Diffusion

Sensors

Photodiodes

Staring arrays

Diodes

Mercury cadmium telluride

Information operations

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