Sn halide based perovskite sensitized solar cells covering up to 1060 nm (presentation video)

Yuhei Ogomi; Atsushi Morita; Shota Tsukamoto; Takahiro Saito; Naotaka Fujikawa; Shen Qing; Taro Toyoda; Kenji Yoshino; Shyam S. Pandey; Tingli Ma; Shuzi Shuzi Hayase

doi:10.1117/12.2061065

20 November 2014 Sn halide based perovskite sensitized solar cells covering up to 1060 nm (presentation video)

Yuhei Ogomi, Atsushi Morita, Shota Tsukamoto, Takahiro Saito, Naotaka Fujikawa, Shen Qing, Taro Toyoda, Kenji Yoshino, Shyam S. Pandey, Tingli Ma, Shuzi Shuzi Hayase

Author Affiliations +

Proceedings Volume 9184, Organic Photovoltaics XV; 91840S (2014) https://doi.org/10.1117/12.2061065
Event: SPIE Organic Photonics + Electronics, 2014, San Diego, California, United States

Abstract

We have succeeded in harvesting energy in the NIR region by using Sn halide based perovskite materials. The cell has the following composition: F-doped SnO2 layered glass/compact titania layer/porous titania layer/Sn based perovskite material/ p-type polymer semiconductor. The edge of the incident photon to current efficiency (IPCE) edge reached 1040 nm. 4.18 % efficiency with open circuit efficiency (Voc):0.42 V, fill factor (FF): 0.5, short circuit current (Jsc): 20.04 mA/cm2 is reported.

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Yuhei Ogomi, Atsushi Morita, Shota Tsukamoto, Takahiro Saito, Naotaka Fujikawa, Shen Qing, Taro Toyoda, Kenji Yoshino, Shyam S. Pandey, Tingli Ma, and Shuzi Shuzi Hayase "Sn halide based perovskite sensitized solar cells covering up to 1060 nm (presentation video)", Proc. SPIE 9184, Organic Photovoltaics XV, 91840S (20 November 2014); https://doi.org/10.1117/12.2061065

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