Defects in undoped semi-insulating InP

Yan Chen; Xin Guo

doi:10.1117/12.2057684

21 February 2014 Defects in undoped semi-insulating InP

Yan Chen, Xin Guo

Proceedings Volume 9142, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013; 914217 (2014) https://doi.org/10.1117/12.2057684
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held July-December 2013, 2013, SuZhou, China

Abstract

This paper, the electron irradiation-induced defects in undoped InP has undergone a high-temperature annealing in iron phosphide ambience. The positron annihilation lifetime spectroscopy (PAL) and thermally stimulated current spectroscopy (TSC) have been employed to study it . The results proved that, the defects in SI-InP after electron irradiation increases and the complex defects are formed . The positron mean lifetime increases about 18 ps , and more defect peaks are also found in the TSC after irradiation.

Citation Download Citation

Yan Chen and Xin Guo "Defects in undoped semi-insulating InP ", Proc. SPIE 9142, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013, 914217 (21 February 2014); https://doi.org/10.1117/12.2057684

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