Paper
17 April 2014 A study of the effect of pellicle support structures on aerial-image quality in EUV lithography by rigorous electromagnetic simulation
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Abstract
To protect an EUV mask from contamination, a pellicle can be used. However, the pellicle membrane must be very thin due to EUV absorption. As a result, a pellicle support structure is needed to avoid deflection of the membrane by gravity. Previous authors have shown that such a structure would produce a non-uniform intensity distribution on the wafer. In this paper, we use simulation to re-examine the issue. The results show that, when coherent illumination is used, a pellicle support structure would have an undesirable effect on the aerial image. However, we also show that, when partially coherent illumination is used, the intensity non-uniformity caused by the pellicle support structure can be effectively smoothed out, resulting in a perfectly acceptable aerial image.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael S. Yeung, Eytan Barouch, and Hye-Keun Oh "A study of the effect of pellicle support structures on aerial-image quality in EUV lithography by rigorous electromagnetic simulation", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481U (17 April 2014); https://doi.org/10.1117/12.2045618
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KEYWORDS
Pellicles

Photomasks

Diffraction

Semiconducting wafers

Extreme ultraviolet

Extreme ultraviolet lithography

Projection systems

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