High-volume manufacturing of 8XXnm-10XXnm single emitter pumps by MBE growth technique

V. Gapontsev; N. Moshegov; I. Berezin; P. Trubenko; A. Komissarov; D. Miftakhutdinov; I. Berishev; N. Strougov; V. Chuyanov; O. Raisky; A. Ovtchinnikov

doi:10.1117/12.2035657

7 March 2014 High-volume manufacturing of 8XXnm-10XXnm single emitter pumps by MBE growth technique

V. Gapontsev, N. Moshegov, I. Berezin, P. Trubenko, A. Komissarov, D. Miftakhutdinov, I. Berishev, N. Strougov, V. Chuyanov, O. Raisky, A. Ovtchinnikov

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Proceedings Volume 8965, High-Power Diode Laser Technology and Applications XII; 89650N (2014) https://doi.org/10.1117/12.2035657
Event: SPIE LASE, 2014, San Francisco, California, United States

Abstract

We report on GaAlInAs/GaAs lasers manufactured by the industry’s biggest production MBE tool. This MBE reactor allows for growth on 23 three-inch diameter wafers at a time, at a cost that compares favorably with the MOCVD method. Data on chip-on-submount performance and uniformity across the entire MBE-growth area are presented and compared to the quality of material produced by smaller size production MBE tools. We also present data on performance characteristics of spatially combined fiber coupled passively cooled single emitter-based pumps. The data include performance characteristics of devices operating at ~805nm and ~975nm wavelengths when driven in CW, QCW and pulsed modes; both pumps use ~105μm core diameter fiber to launch power confined within NA<0.15.

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V. Gapontsev, N. Moshegov, I. Berezin, P. Trubenko, A. Komissarov, D. Miftakhutdinov, I. Berishev, N. Strougov, V. Chuyanov, O. Raisky, and A. Ovtchinnikov "High-volume manufacturing of 8XXnm-10XXnm single emitter pumps by MBE growth technique", Proc. SPIE 8965, High-Power Diode Laser Technology and Applications XII, 89650N (7 March 2014); https://doi.org/10.1117/12.2035657

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