Electrical characterization of GaN-channel MOSFETs

Jakub Jasiński; Lidia Łukasiak; Andrzej Jakubowski; Do-Kywn Kim; Dong-Seok Kim; Sung-Ho Hahm; Jung-Hee Lee

doi:10.1117/12.2031288

25 July 2013 Electrical characterization of GaN-channel MOSFETs

Jakub Jasiński, Lidia Łukasiak, Andrzej Jakubowski, Do-Kywn Kim, Dong-Seok Kim, Sung-Ho Hahm, Jung-Hee Lee

Proceedings Volume 8902, Electron Technology Conference 2013; 89020U (2013) https://doi.org/10.1117/12.2031288
Event: Electron Technology Conference 2013, 2013, Ryn, Poland

Abstract

The channel mobility and reliability of NMOSFETs with GaN channel are investigated by means of split CV and constant-voltage-stress techniques. The influence of stress polarity and duration on current in the off-state, threshold voltage and subthreshold slope is studied.

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Jakub Jasiński, Lidia Łukasiak, Andrzej Jakubowski, Do-Kywn Kim, Dong-Seok Kim, Sung-Ho Hahm, and Jung-Hee Lee "Electrical characterization of GaN-channel MOSFETs", Proc. SPIE 8902, Electron Technology Conference 2013, 89020U (25 July 2013); https://doi.org/10.1117/12.2031288

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