Paper
23 May 2013 A background light resistant TOF range finder with integrated PIN photodiode in 0.35μm CMOS
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Abstract
Within this work a single pixel Time-of-Flight (TOF) based range finder is presented. The sensor is fabricated in a 0.35 μm 1P4M CMOS process occupying an area of 45 × 60 μm2 at ~50% fill factor. It takes advantage of the integrated PIN photodiode, representing, to the best knowledge of the author, the first reported TOF device done in this technology with a PIN detector. The measurement results show a standard deviation of 1 cm for a total integration time of 2.2 ms and a received optical power of 10 nW. Furthermore, the maximal measured integration time per single phase step is slightly below 1 ms, being an improvement by the factor of 40 over the previous work using a similar approach. As proven with the measurements, the background light influence on the measured distance can be neglected even if the dc light is by the factor of 600 larger than the modulation signal.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Milos Davidovic, Johannes Seiter, Michael Hofbauer, Wolfgang Gaberl, and Horst Zimmermann "A background light resistant TOF range finder with integrated PIN photodiode in 0.35μm CMOS", Proc. SPIE 8791, Videometrics, Range Imaging, and Applications XII; and Automated Visual Inspection, 87910R (23 May 2013); https://doi.org/10.1117/12.2021021
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Cited by 5 scholarly publications.
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KEYWORDS
PIN photodiodes

Sensors

Distance measurement

Modulation

Integrated optics

Capacitors

CMOS technology

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