High-temperature SOI pressure sensors on the base of the MEMS micromachining technology

L. V. Sokolov

doi:10.1117/12.2015261

31 January 2013 High-temperature SOI pressure sensors on the base of the MEMS micromachining technology

L. V. Sokolov

Author Affiliations +

Proceedings Volume 8759, Eighth International Symposium on Precision Engineering Measurement and Instrumentation; 875952 (2013) https://doi.org/10.1117/12.2015261
Event: International Symposium on Precision Engineering Measurement and Instrumentation 2012, 2012, Chengdu, China

Abstract

There is a need of measuring distributed pressure on the compressor inlet of the aircraft engine with high precision within a wide operating temperature range to improve the efficiency of aircraft engine control. The basic solutions and principles of designing high-temperature (to 250°C) microelectromechanical pressure sensors based on a membrane-type SOI heterostructure (SOIMT-MEMS) with a monolithic integral tensoframe (MT) are proposed in accordance with the developed concept [1] which excludes the use of electric p-n junctions in semiconductor microelectromechanical sensors. The SOIMT-MEMS technology relies on the group processes of microelectronics and micromechanics for high precision microprofiling of three-dimensional micromechanical structure which exclude high-temperature silicon doping processes. According to the design, manufacturing process and experiment results the technology was optimized and a pilot batch of SOIMT-MEMS samples with the regular geometry and without any undercuts of the tensoframe convex angles was manufactured.

Citation Download Citation

L. V. Sokolov "High-temperature SOI pressure sensors on the base of the MEMS micromachining technology", Proc. SPIE 8759, Eighth International Symposium on Precision Engineering Measurement and Instrumentation, 875952 (31 January 2013); https://doi.org/10.1117/12.2015261

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