Wafer-level reliability characterization for wafer-level packaged microbolometer with ultra-small array size

Hee Yeoun Kim; Chungmo Yang; Jae Hong Park; Ho Jung; Taehyun Kim; Kyung Tae Kim; Sung Kyu Lim; Sang Woo Lee; Jay Mitchell; Wook Joong Hwang; Kwyro Lee

doi:10.1117/12.2015738

19 June 2013 Wafer-level reliability characterization for wafer-level packaged microbolometer with ultra-small array size

Hee Yeoun Kim, Chungmo Yang, Jae Hong Park, Ho Jung, Taehyun Kim, Kyung Tae Kim, Sung Kyu Lim, Sang Woo Lee, Jay Mitchell, Wook Joong Hwang, Kwyro Lee

Author Affiliations +

Proceedings Volume 8704, Infrared Technology and Applications XXXIX; 87043E (2013) https://doi.org/10.1117/12.2015738
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

For the development of small and low cost microbolometer, wafer level reliability characterization techniques of vacuum packaged wafer are introduced. Amorphous silicon based microbolometer-type vacuum sensors fabricated in 8 inch wafer are bonded with cap wafer by Au-Sn eutectic solder. Membrane deflection and integrated vacuum sensor techniques are independently used to characterize the hermeticity in a wafer-level. For the packaged wafer with membrane thickness below 100um, it is possible to determine the hermeticity as screening test by optical detection technique. Integrated vacuum sensor having the same structure as bolometer pixel shows the vacuum level below 100mTorr. All steps from packaging process to fine hermeticity test are implemented in wafer level to prove the high volume and low cost production.

Citation Download Citation

Hee Yeoun Kim, Chungmo Yang, Jae Hong Park, Ho Jung, Taehyun Kim, Kyung Tae Kim, Sung Kyu Lim, Sang Woo Lee, Jay Mitchell, Wook Joong Hwang, and Kwyro Lee "Wafer-level reliability characterization for wafer-level packaged microbolometer with ultra-small array size", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87043E (19 June 2013); https://doi.org/10.1117/12.2015738

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