Paper
12 April 2013 Wafer sub-layer impact in OPC/ORC models for 2x nm node implant layers
Author Affiliations +
Abstract
From 28nm technology node and below, Optical Proximity Correction (OPC) needs to take into account light scattering effects from prior layers when bottom anti-reflective coating (BARC) is not used, which is typical for implant layers. In this paper, we implement a sub-layer aware simulation method into a verification tool for Optical Rule Check (ORC) that is used on full 28nm test chip. The sub-layer aware verification can predict defects that are missed by standard ORC. SEM-CD review and defectivity analysis were used to confirm the validity of the sub-layer aware model on wafer.
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Jean-Christophe Le-Denmat, Catherine Martinelli, Elodie Sungauer, Jean-Christophe Michel, Emek Yesilada, and Frederic Robert "Wafer sub-layer impact in OPC/ORC models for 2x nm node implant layers", Proc. SPIE 8683, Optical Microlithography XXVI, 868314 (12 April 2013); https://doi.org/10.1117/12.2011424
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KEYWORDS
Photomasks

Optical proximity correction

Semiconducting wafers

Silicon

Optical lithography

Calibration

Defect inspection

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