Optimizing XPS tool performance for characterizing trace contamination elements for EUV resist outgas testing

Mihir Upadhyaya; Yudhishthir Kandel; Gregory Denbeaux; Cecilia Montgomery; Yu-Jen Fan

doi:10.1117/12.2018629

1 April 2013 Optimizing XPS tool performance for characterizing trace contamination elements for EUV resist outgas testing

Mihir Upadhyaya, Yudhishthir Kandel, Gregory Denbeaux, Cecilia Montgomery, Yu-Jen Fan

Author Affiliations +

Proceedings Volume 8679, Extreme Ultraviolet (EUV) Lithography IV; 867934 (2013) https://doi.org/10.1117/12.2018629
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Extreme ultraviolet (EUV) resist outgassing is viewed as one of the factors to be considered in the research and development of EUV resists^1-3. Resist outgassing in an EUV exposure tool system can lead to contaminated optics which can cause a decrease in EUV energy reaching the wafer surface, in turn leading to lower throughput. There is a program underway to measure the relative contamination rates from different resists following the ASML approved protocols for witness plate testing⁴. One of the important steps in this is measuring the residue on the optics after cleaning using X-ray photoelectron spectroscopy (XPS). Anything non-cleanable on the reflective optics could lead to its permanent degradation which is undesirable. Due to the number of resists being developed for EUV, there is a need for rapid testing and optimizing the XPS for throughput, precision and accuracy. In this paper, we discuss the role of XPS in quantification of species that adhere to the witness plate sample, which is a ruthenium-coated silicon wafer, as a result of the resist outgassing upon EUV exposure. XPS is a relatively slow spectroscopic technique when high accuracy in measurements is necessary, as is the requirement for our application. In this study we have attempted to optimize the various XPS parameters such as the beam power, beam spot size as well as the pass energy of the analyzer. We also studied the XPS anode degradation and the impact it has on the measurement accuracy.

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Mihir Upadhyaya, Yudhishthir Kandel, Gregory Denbeaux, Cecilia Montgomery, and Yu-Jen Fan "Optimizing XPS tool performance for characterizing trace contamination elements for EUV resist outgas testing", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867934 (1 April 2013); https://doi.org/10.1117/12.2018629

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KEYWORDS

Electrons

X-rays

Extreme ultraviolet lithography

Extreme ultraviolet

Contamination

Semiconducting wafers

Gold

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