EUV sensitive Si containing hard mask (Si-HM) for PTD and NTD process in EUVL

Wataru Shibayama; Shuhei Shigaki; Rikimaru Sakamoto; Ryuji Onishi; Hiroaki Yaguchi; Bang Ching Ho

doi:10.1117/12.2011441

1 April 2013 EUV sensitive Si containing hard mask (Si-HM) for PTD and NTD process in EUVL

Wataru Shibayama, Shuhei Shigaki, Rikimaru Sakamoto, Ryuji Onishi, Hiroaki Yaguchi, Bang Ching Ho

Author Affiliations +

Proceedings Volume 8679, Extreme Ultraviolet (EUV) Lithography IV; 867914 (2013) https://doi.org/10.1117/12.2011441
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Tri-layer process is the one of the key technique both for the lithography and etching around Hp20nm patterning. In applying for tri-layer process, we are focusing on inorganic type under layer which mainly containing Si atoms. This Si type hard mask (Si-HM) can perform not only as the Lithography performance enhancement layer for fine pitch, but also as the etching hard mask against bottom layer (spin on carbon : SOC). In this paper, we propose our new Si-HM concepts to achieve high sensitivity, wide process window and good line edge roughness. The key point of our concepts is EUV sensitive unit in Si-HM. Our EUV sensitive unit strongly promotes acid generation from PAG of EUV photo resist. Especially, for EUV NTD lithography process, EUV sensitive unit can perform as the adhesion enhancer between Si-HM and photo resist at EUV exposed area. As this result, we could resolve 22nm L/S=1/1 pattern on the EUV sensitive Si-HM by EUV NTD process even in the condition which hp40nm was the resolution limit with HMDS treated Bare-Si / PR stack. Moreover, from the view point of etching hard mask, 30nm dense L/S pattern and 20nm semi iso line pattern could be transferred to SOC layer successfully. We will present our latest Si-HM performance specialized for EUV lithography.

Citation Download Citation

Wataru Shibayama, Shuhei Shigaki, Rikimaru Sakamoto, Ryuji Onishi, Hiroaki Yaguchi, and Bang Ching Ho "EUV sensitive Si containing hard mask (Si-HM) for PTD and NTD process in EUVL", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867914 (1 April 2013); https://doi.org/10.1117/12.2011441

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE