Comparative analysis of high-performance infrared avalanche
InxGa1-xAsyP1-y and Hg1-xCdxTe heterophotodiodes

Viacheslav Kholodnov; Albina Drugova; Mikhail Nikitin; Galina Chekanova

doi:10.1117/12.971213

24 October 2012 Comparative analysis of high-performance infrared avalanche In_xGa_1-xAsyP_1-y and Hg_1-xCd_xTe heterophotodiodes

Viacheslav Kholodnov, Albina Drugova, Mikhail Nikitin, Galina Chekanova

Author Affiliations +

Proceedings Volume 8541, Electro-Optical and Infrared Systems: Technology and Applications IX; 85411A (2012) https://doi.org/10.1117/12.971213
Event: SPIE Security + Defence, 2012, Edinburgh, United Kingdom

Abstract

Technology of infrared (IR) avalanche photodiodes (APDs) gradually moves from simple single element APD to 2D focal plane arrays (FPA). Spectral covering of APDs is expanded continuously from classic 1.3 μm to longer wavelengths due to using of narrow-gap semiconductor materials like Hg_1-xCd_xTe. APDs are of great interest to developers and manufacturers of different optical communication, measuring and 3D reconstruction thermal imaging systems. Major IR detector materials for manufacturing of high-performance APDs became heteroepitaxial structures In_xGa_1-xAs_yP_1-y and Hg_1-xCd_xTe. Progress in IR APD technology was achieved through serious improvement in material growing techniques enabling forming of multilayer heterostuctures with separate absorption and multiplication regions (SAM). Today SAM-APD design can be implemented both on In_xGa_1-xAs_yP_1-y and Hg_1-xCd_xTe multilayer heteroepitaxial structures. To create the best performance optimal design avalanche heterophotodiode (AHPD) it is necessary to carry out a detailed theoretical analysis of basic features of generation, avalanche breakdown and multiplication of charge carriers in proper heterostructure. Optimization of AHPD properties requires comprehensive estimation of AHPD’s pixel performance depending on pixel’s multi-layer structure design, layers doping, distribution of electric field in the structure and operating temperature. Objective of the present article is to compare some features of 1.55 μm SAM-AHPDs based on In_xGa_1-xAs_yP_1-y and Hg_1-xCd_xTe.

Citation Download Citation

Viacheslav Kholodnov, Albina Drugova, Mikhail Nikitin, and Galina Chekanova "Comparative analysis of high-performance infrared avalanche In_xGa_1-xAsyP_1-y and Hg_1-xCd_xTe heterophotodiodes", Proc. SPIE 8541, Electro-Optical and Infrared Systems: Technology and Applications IX, 85411A (24 October 2012); https://doi.org/10.1117/12.971213

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KEYWORDS

Heterojunctions

Avalanche photodetectors

Cadmium

Mercury

Tellurium

Infrared technology

Gallium

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