Overlapping-Gate Ccd Imagers On Gallium Arsenide

P. B. Kosel; D. S. Katzer; R. E . Poore

doi:10.1117/12.967518

1 January 1987 Overlapping-Gate Ccd Imagers On Gallium Arsenide

P. B. Kosel, D. S. Katzer, R. E . Poore

Proceedings Volume 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects; (1987) https://doi.org/10.1117/12.967518
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States

Abstract

Charge-coupled device (CCD) imagers have been fabricated on gallium arsenide (GaAs) with very closely spaced (<100nm) Schottky-barrier metal electrodes. The short interelectrode spacing was achieved by using anodic oxidation in an ethylene glycol based electrolyte. All the active device regions of the CCD imagers were formed by silicon implantation into semi-insulating GaAs substrates followed by rapid thermal activation. The photodetectors were Schottky barrier diodes formed with thin aluminum metal anodes over silicon-implanted active regions in the semi-insulating substrate. The detectors formed a linear array along one side of the CCD channel and a three-phase transfer electrode structure was used. The imagers have been tested with front side illumination at clocking speeds up to 25 MHz.

Citation Download Citation

P. B. Kosel, D. S. Katzer, and R. E . Poore "Overlapping-Gate Ccd Imagers On Gallium Arsenide", Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); https://doi.org/10.1117/12.967518

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