In-situ Sn contamination removal by hydrogen plasma

J. Sporre; D. Elg; D. Andruczyk; T. Cho; D. N. Ruzic; S. Srivastava; D. C. Brandt

doi:10.1117/12.916434

23 March 2012 In-situ Sn contamination removal by hydrogen plasma

J. Sporre, D. Elg, D. Andruczyk, T. Cho, D. N. Ruzic, S. Srivastava, D. C. Brandt

Proceedings Volume 8322, Extreme Ultraviolet (EUV) Lithography III; 83222L (2012) https://doi.org/10.1117/12.916434
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

One of the main challenges in extreme ultraviolet lithography (EUVL) is the development of a method for cleaning collector optics without inhibiting cost-effectiveness. Cost-effectiveness of EUV methods can be increased by in-situ processes for removing debris placed on the collector optic. This paper focuses on the use of a hydrogen plasma to remove Sn, a common EUV fuel, from Si surfaces. Sn was deposited on both large and small Si samples via magnetron sputtering, and optimized hydrogen plasma selectively etched the Sn. Deposition uniformity and thickness are measured, as are Sn etch rates and cleaning uniformity. Positive results indicate the potential of this method for use in cleaning EUV mirrors.

Citation Download Citation

J. Sporre, D. Elg, D. Andruczyk, T. Cho, D. N. Ruzic, S. Srivastava, and D. C. Brandt "In-situ Sn contamination removal by hydrogen plasma", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83222L (23 March 2012); https://doi.org/10.1117/12.916434

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