Paper
23 March 2012 Liftoff lithography of metals for extreme ultraviolet lithography mask absorber layer patterning
Adam Lyons, Ranganath Teki, John Hartley
Author Affiliations +
Abstract
The authors present a process for patterning Extreme Ultraviolet Lithography (EUVL) mask absorber metal using electron beam evaporation and bi-layer liftoff lithography. The Line Edge Roughness (LER) and Critical Dimension Uniformity (CDU) of patterned chrome absorber are determined for various chrome thicknesses on silicon substrates, and the viability of the method for use with nickel absorber and on EUVL masks is demonstrated. Scanning Electron Microscope (SEM) data is used with SuMMIT software to determine the absorber LER and CDU. The Lawrence Berkeley National Labs Actinic Inspection Tool (AIT) is used to verify the printability of the pattern down to 24nm half pitch. The effect of processing on the integrity of the mask multilayer is measured using an actinic reflectometer at the College of Nanoscale Science and Engineering.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Adam Lyons, Ranganath Teki, and John Hartley "Liftoff lithography of metals for extreme ultraviolet lithography mask absorber layer patterning", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83221X (23 March 2012); https://doi.org/10.1117/12.916628
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications and 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Extreme ultraviolet lithography

Reflectivity

Nickel

Electron beam lithography

Metals

Line edge roughness

Photomasks

Back to Top