High efficiency InGaN solar cell with a graded p-InGaN top layer

Nobuhiko Sawaki; Tomoki Fujisawa

doi:10.1117/12.905531

27 February 2012 High efficiency InGaN solar cell with a graded p-InGaN top layer

Nobuhiko Sawaki, Tomoki Fujisawa

Author Affiliations +

Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 826210 (2012) https://doi.org/10.1117/12.905531
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

A new device structure was investigated numerically to improve the conversion efficiency of a single junction p- InGaN/n-InGaN solar cell, where the energy band gap of the p-type top layer was increased gradually by varying the In composition during the growth. The gradual increase of the band gap generates a built in electric filed in the p-type top layer which accelerates drift motion of photo-excited electrons. Numerical results showed that more than one order of magnitude enhancement of the photo-current is achieved by the built in electric field as high as 100V/cm.

Citation Download Citation

Nobuhiko Sawaki and Tomoki Fujisawa "High efficiency InGaN solar cell with a graded p-InGaN top layer", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826210 (27 February 2012); https://doi.org/10.1117/12.905531

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE