Response characteristic of InSb IRFPA under high reverse bias condition

Jun-ming Liu; Qiang Guo; Wei Wang; Zhen-yu Peng

doi:10.1117/12.900335

8 September 2011 Response characteristic of InSb IRFPA under high reverse bias condition

Jun-ming Liu, Qiang Guo, Wei Wang, Zhen-yu Peng

Proceedings Volume 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications; 81932C (2011) https://doi.org/10.1117/12.900335
Event: International Symposium on Photoelectronic Detection and Imaging 2011, 2011, Beijing, China

Abstract

Infrared Focal Plane Array (IRFPA) of InSb is designed to work under the condition of zero bias voltage or nearly to zero bias voltage. InSb IRFPA can't work normally if PN junction is in the condition of high reverse bias voltage for several minutes. In order to analyze the causation of the phenomena some experiments were designed to simulate the condition of high reverse bias voltage. It is found that when the reverse bias voltage exceeds the limited value, the responsibility of InSb detector becomes lower. The phenomena will not change unless the operating temperature is raised to room temperature and kept for a long time. Response characteristic of InSb PN junction under high reverse bias voltage is briefly described in this paper. The factors affecting response characteristic are discussed. The limited value of the reverse voltage is given. The result is useful to design the driving circuit of InSb IPFPA. It also plays the guidance part in application of InSb detector.

Citation Download Citation

Jun-ming Liu, Qiang Guo, Wei Wang, and Zhen-yu Peng "Response characteristic of InSb IRFPA under high reverse bias condition", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81932C (8 September 2011); https://doi.org/10.1117/12.900335

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