Noise research of microbolometer array under temperature environment

You-tang Gao; Hua-min Chen; Yuan Xu; Xia-nan Sun; Ben-kang Chang

doi:10.1117/12.899421

8 September 2011 Noise research of microbolometer array under temperature environment

You-tang Gao, Hua-min Chen, Yuan Xu, Xia-nan Sun, Ben-kang Chang

Author Affiliations +

Proceedings Volume 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications; 81930S (2011) https://doi.org/10.1117/12.899421
Event: International Symposium on Photoelectronic Detection and Imaging 2011, 2011, Beijing, China

Abstract

Thermal noise and steady performance of infrared sight has always been the concern of military production under temperature test conditions. According to military optical instrument environmental test standard of GJB1788-93 and MIL-STD-810F in infrared detector test method, the test procedure and test method of 320×240 α-Si micro-bolometer array of UL01011-type were given in detail. By using thermal noise theory and mathematical model analysis method, the noise models of Johnson noise, 1/ f noise, noise caused by electrothermal effect in temperature shock test condition, preamplifier noise and other noise models of micro-bolometer array were established and analyzed. Noise models under temperature environment were analyzed. The results are as follows: the basic noise of micro-bolometer array is the temperature fluctuating noise (thermal noise) which consists of background radiation fluctuation noise and thermal conductivity noise. In addition, there is Johnson noise, 1/ f noise, noise caused by electrothermal effect and preamplifier noise etc. Among them thermal noise, Johnson noise and 1/ f noise is the main noise source which determines the limited performances of micro-bolometer array.

Citation Download Citation

You-tang Gao, Hua-min Chen, Yuan Xu, Xia-nan Sun, and Ben-kang Chang "Noise research of microbolometer array under temperature environment", Proc. SPIE 8193, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, 81930S (8 September 2011); https://doi.org/10.1117/12.899421

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