Paper
10 November 1987 4 X 4096-Element SW IR Multispectral Focal Plane Array
Masahiko Denda, Masafumi Kimata, Shuhei Iwade, Naoki Yutani, Takashi Kondo, Natsuro Tsubouchi
Author Affiliations +
Abstract
A 4-band X 4096-element IR-CCD has been developed with Schottky-barrier detectors operating at 80 K. The device is a monolithic quadruple-band image sensor in the short wavelength infrared (1.6 pm - 2.35 }gym) band. This imager has a stagger detector layout. The detector size is 10 μm X 10 μm and the effective fill factor is 100 %. A package for the SW IR-CCD has been also developed. The package is a SiC-Al203-SiC structure. The device is assembled with epoxy. The epoxy mounting does not degrade after 9000 times heat shock experiments (77 K - 333 K). The measured performance of the device includes the transfer inefficiency of the CCD, signal to noise ratio, dynamic range, uniformity and power dissipation of the device.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahiko Denda, Masafumi Kimata, Shuhei Iwade, Naoki Yutani, Takashi Kondo, and Natsuro Tsubouchi "4 X 4096-Element SW IR Multispectral Focal Plane Array", Proc. SPIE 0819, Infrared Technology XIII, (10 November 1987); https://doi.org/10.1117/12.941830
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Cited by 2 scholarly publications and 1 patent.
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KEYWORDS
Sensors

Charge-coupled devices

Silicon carbide

Infrared imaging

Infrared sensors

Silicon

Infrared radiation

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