MWIR LED performance enhancement by nano-plasmon layer

Naresh C. Das; W. Chang

doi:10.1117/12.884884

13 May 2011 MWIR LED performance enhancement by nano-plasmon layer

Naresh C. Das, W. Chang

Proceedings Volume 8015, Technologies for Synthetic Environments: Hardware-in-the-Loop XVI; 801504 (2011) https://doi.org/10.1117/12.884884
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

We report a significant increase in electroluminescence from GaSb based mid-wave infrared inter band cascade (IC) LED device through coupling with localized surface plasmon layer. Thin Au Plasmon layer of 20 nm thickness is deposited on top anode electrode by e-beam evaporation technique. Surface Plasmon enhancement effects result is 100% increase in light output for 50 μm square mesa device. We fabricated an IC LED device with nine cascade active/injection layers with InAs/Ga1-xInxSb/InAs quantum well (QW) active region.

Citation Download Citation

Naresh C. Das and W. Chang "MWIR LED performance enhancement by nano-plasmon layer", Proc. SPIE 8015, Technologies for Synthetic Environments: Hardware-in-the-Loop XVI, 801504 (13 May 2011); https://doi.org/10.1117/12.884884

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