Invited Paper Recent Developments In Reactive Plasma Etching Of III-V Compound Semiconductors

Evelyn L. Hu; Larry A. Coldren

doi:10.1117/12.941031

22 April 1987 Invited Paper Recent Developments In Reactive Plasma Etching Of III-V Compound Semiconductors

Evelyn L. Hu, Larry A. Coldren

Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941031
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Reactive plasma etching is being increasingly utilized in the fabrication of III-V - based electronic and optoelectronic devices. The high resolution and control afforded by dry etching processes have led to their rapid move from research to manufacturing applications. This paper will review some of those applications, processes, progress and problems associated with reactive plasma etching of III-V materials.

Citation Download Citation

Evelyn L. Hu and Larry A. Coldren "Invited Paper Recent Developments In Reactive Plasma Etching Of III-V Compound Semiconductors", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941031

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