Paper
17 January 2011 Mid-infrared silicon photonic devices
Goran Z. Mashanovich, Milan M. Milosevic, Milos Nedeljkovic, Nathan Owens, William R. Headley, Ee Jin Teo, Boqian Xiong, Pengyuan Yang, Youfang Hu
Author Affiliations +
Proceedings Volume 7943, Silicon Photonics VI; 79430Q (2011) https://doi.org/10.1117/12.876060
Event: SPIE OPTO, 2011, San Francisco, California, United States
Abstract
The mid-infrared spectral region is interesting for bio-chemical sensing, environmental monitoring, free space communications, or military applications. Silicon is relatively low-loss from 1.2 to 8 μm and from 24 to 100 μm, and therefore silicon photonic circuits can be used in mid- and far- infrared wavelength ranges. In this paper we investigate several silicon based waveguide structures for mid-infrared wavelength region.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Goran Z. Mashanovich, Milan M. Milosevic, Milos Nedeljkovic, Nathan Owens, William R. Headley, Ee Jin Teo, Boqian Xiong, Pengyuan Yang, and Youfang Hu "Mid-infrared silicon photonic devices", Proc. SPIE 7943, Silicon Photonics VI, 79430Q (17 January 2011); https://doi.org/10.1117/12.876060
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KEYWORDS
Silicon

Waveguides

Mid-IR

Silicon photonics

Wave propagation

Ions

Oxides

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