Resonant Atr (Attenuated Total Reflection) Spectroscopy & The Nondestructive Characterization Of Multilayer Structures

Bruno Bosacchi; Robert C. Oehrle

doi:10.1117/12.940925

22 April 1987 Resonant Atr (Attenuated Total Reflection) Spectroscopy & The Nondestructive Characterization Of Multilayer Structures

Bruno Bosacchi, Robert C. Oehrle

Author Affiliations +

Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940925
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

We introduce the Resonant ATR technique, a new non-destructive technique for the characterization of multilayer structures in terms of the thickness and composition of the various layers. After a review of the basic principles, the technique is exemplified through its application to the layer thickness determination of wafers used in the manufacture of heterostructure lasers.

Citation Download Citation

Bruno Bosacchi and Robert C. Oehrle "Resonant Atr (Attenuated Total Reflection) Spectroscopy & The Nondestructive Characterization Of Multilayer Structures", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940925

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