Paper
30 March 2010 Study of post develop defect on TC-less immersion resist
Masahiko Harumoto, Sadayasu Suyama, Tadashi Miyagi, Akihiro Hisai, Masaya Asai
Author Affiliations +
Abstract
This study reports on post develop defect on TC-less immersion resist system. There are major defects on TC-less resist system, for example micro-Bridging, Blob and pattern collapse defect, as is well known. Among these defect, we reported Blob and pattern collapse defect could be reduced by Acid rinse involving CO2. However, we also reported there was the difference in the effect for each resist. In this work, we show the great effective and slight effective case for post develop defect and we discuss the cause of difference in acid rinse effect. We evaluated and confirmed the effect on each resist, pattern, exposed area location, develop process and so on. Furthermore, we made a mechanism of defect appearing based on the analysis of defect components and the measurement of resist surface condition for each develop process. Finally we show the novel approach to post develop defect reduction on TC-less immersion resist system.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahiko Harumoto, Sadayasu Suyama, Tadashi Miyagi, Akihiro Hisai, and Masaya Asai "Study of post develop defect on TC-less immersion resist", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 763920 (30 March 2010); https://doi.org/10.1117/12.845834
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Cited by 3 scholarly publications.
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KEYWORDS
Liquids

Semiconducting wafers

Scanning electron microscopy

Raman spectroscopy

Chemical analysis

Interfaces

Photoresist processing

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