Monitoring of critical dimensions in the sidewall-transferred double-patterning process using scatterometry

Keisuke Tanaka; Joungchel Lee

doi:10.1117/12.846641

1 April 2010 Monitoring of critical dimensions in the sidewall-transferred double-patterning process using scatterometry

Keisuke Tanaka, Joungchel Lee

Author Affiliations +

Proceedings Volume 7638, Metrology, Inspection, and Process Control for Microlithography XXIV; 76382W (2010) https://doi.org/10.1117/12.846641
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Due to immaturity of extreme ultra violet (EUV) lithography and resolution limitation of 193 nm immersion lithography for 32 nm node and beyond, various double patterning processes have been developed as an alternative process to shrink device size other than improving resolution of photo lithography. Double patterning has been accepted as a process bridging between 193 nm immersion and EUV lithographic process for 32 nm and 22 nm nodes. Recently, a sidewall-transferred double-patterning process has been introduced to reduce cost and keep enough process margins in device fabrication. For the development of the double patterning process and deployment of the double patterning process to fabrication lines, it is necessary to monitor and control the critical dimensions and profile shapes in the double patterning process. In this paper, we report monitoring of critical dimensions and profile shapes at several process steps of the double patterning process using spectroscopic ellipsometry based scatterometry.

Citation Download Citation

Keisuke Tanaka and Joungchel Lee "Monitoring of critical dimensions in the sidewall-transferred double-patterning process using scatterometry", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76382W (1 April 2010); https://doi.org/10.1117/12.846641

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