Paper
22 January 2010 Improving the operating temperature of quantum dots-in-a-well detectors
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Abstract
In this paper, we report some of our recent results on improving the operating temperature of dots-in-a-well (DWELL) infrared photodetectors. This was achieved by engineering the dot geometry and the interrelated quantum confinement by varying the growth conditions and composition of the subsequent capping of the quantum dots (QDs). The influence of these conditions was determined by examining the optical properties of the QDs directly and indirectly with their function in a DWELL IR photodetector. Spectral response was observed until 250K with spectral response peak at 3.2μm, and the peak detectivity is 1×109 cmHz1/2/W at 77K and ~ 1e8 cmHz1/2/W at 250K. By varying the external bias, the DWELL heterostructure allows for the manipulation of the operating wavelength. This tunability is a critical stepping stone towards creating multicolor imaging systems that can be used to take images at multiple wavelengths from each pixel in a focal plane array.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiayi Shao, Thomas E. Vandervelde, Woo-yong Jang, Andreas Stintz, and Sanjay Krishna "Improving the operating temperature of quantum dots-in-a-well detectors", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76081Y (22 January 2010); https://doi.org/10.1117/12.843676
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Cited by 3 scholarly publications.
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KEYWORDS
Sensors

Quantum wells

Diffusion

Quantum dots

Quantum well infrared photodetectors

Gallium arsenide

Long wavelength infrared

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