Degradation analysis of individual emitters in 808nm QCW laser diode array for space applications

Othman Rehioui; Laurent Bechou; Thierry Fillardet; Andreas Kohl; Yves Ousten; Gerard Volluet

doi:10.1117/12.840671

17 February 2010 Degradation analysis of individual emitters in 808nm QCW laser diode array for space applications

Othman Rehioui, Laurent Bechou, Thierry Fillardet, Andreas Kohl, Yves Ousten, Gerard Volluet

Proceedings Volume 7583, High-Power Diode Laser Technology and Applications VIII; 758314 (2010) https://doi.org/10.1117/12.840671
Event: SPIE LASE, 2010, San Francisco, California, United States

Abstract

Degradation analysis of 808nm QCW laser diode array for space application has been investigated by using individual emitter characterization technique. We found that homogeneity of electro-optical characteristics at emitter level along the bar is a relevant parameter to ensure the reliability of the bars. This work is focused on the importance of individual emitter characterization and aging test results analysis up to 4.47 Gshots.

Citation Download Citation

Othman Rehioui, Laurent Bechou, Thierry Fillardet, Andreas Kohl, Yves Ousten, and Gerard Volluet "Degradation analysis of individual emitters in 808nm QCW laser diode array for space applications", Proc. SPIE 7583, High-Power Diode Laser Technology and Applications VIII, 758314 (17 February 2010); https://doi.org/10.1117/12.840671

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