Extensions of boundary layer modeling of photomask topography effects to fast-CAD using pattern matching

Marshal A. Miller; Kenji Yamazoe; Andrew R. Neureuther

doi:10.1117/12.829657

29 September 2009 Extensions of boundary layer modeling of photomask topography effects to fast-CAD using pattern matching

Marshal A. Miller, Kenji Yamazoe, Andrew R. Neureuther

Author Affiliations +

Proceedings Volume 7488, Photomask Technology 2009; 74883H (2009) https://doi.org/10.1117/12.829657
Event: SPIE Photomask Technology, 2009, Monterey, California, United States

Abstract

In lithography for the 45nm node and beyond, phase errors introduced through electromagnetic field (EMF) effects at photomask openings are significant sources of error in calculating on-wafer images. These edge effects create distortion in both real and imaginary field transmission, which leads to a tilt in the process window, and must be addressed in mask design to avoid loss of process latitude. This study presents a new formulation for pattern matching, which allows EMF effects to be included via boundary layer modeling to facilitate extremely fast assessment of EMF impact on imaging. Boundary layers are first used to model these edge effects, by adding additional transmission features to a layout to represent the error transmissions caused by edges. Pattern matching is then used to determine susceptibly to various pre-existing perturbations, in the presence of defocus. This process can be extremely fast and hotspot detection can be run on an entire chip in hours, compared to days for aerial imaging. Correlation between pattern matching and full aerial imaging can be as high as 0.97 for coherent imaging, and ≈ 0.75 for off-axis dipole illumination. This pattern matching framework is extremely flexible and can be used for fast assessment of any series of effects which can be described as a path difference in the pupil or as a transmission on the mask.

Citation Download Citation

Marshal A. Miller, Kenji Yamazoe, and Andrew R. Neureuther "Extensions of boundary layer modeling of photomask topography effects to fast-CAD using pattern matching", Proc. SPIE 7488, Photomask Technology 2009, 74883H (29 September 2009); https://doi.org/10.1117/12.829657

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE