Plasma characterization of Tetra III chrome etch system

Michael Grimbergen; D. G. Nest; Keven Yu; T. Y. Becky Leung; Madhavi Chandrachood; Alan Ouye; Saravjeet Singh; Ibrahim Ibrahim; Ajay Kumar; David Graves

doi:10.1117/12.833490

6 November 2009 Plasma characterization of Tetra III chrome etch system

Michael Grimbergen, D. G. Nest, Keven Yu, T. Y. Becky Leung, Madhavi Chandrachood, Alan Ouye, Saravjeet Singh, Ibrahim Ibrahim, Ajay Kumar, David Graves

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Proceedings Volume 7488, Photomask Technology 2009; 74880L (2009) https://doi.org/10.1117/12.833490
Event: SPIE Photomask Technology, 2009, Monterey, California, United States

Abstract

Both Langmuir probe and spatial optical emission spectroscopy (OES) measurements have been used to characterize the Tetra^TM chrome etch chamber. Langmuir data was measured over a range of process pressures between 1.5mT and 10mT and source powers between 150W and 500W. At 350W, the data show electron and ion densities near 1 x 10⁹ cm^-3 for Ar and for Cl₂/O₂ etch plasmas. Ion density trends with pressure were observed to be opposite for the two plasmas. The effect of the third electrode designed in the chamber was demonstrated to reduce ion density by more than an order of magnitude for Ar plasma and still lower for Cl₂/O₂ plasma. Electron temperature and plasma potential are also reduced. Radial OES measurements are reported with a new apparatus that yields direct spatial emission data. Spatial scans of infrared emission from atomic Cl were measured under a range of several chamber conditions already measured with the Langmuir probe. The scans showed that the emission uniformity above the mask can be adjusted to a flat profile by selection of the process condition.

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Michael Grimbergen, D. G. Nest, Keven Yu, T. Y. Becky Leung, Madhavi Chandrachood, Alan Ouye, Saravjeet Singh, Ibrahim Ibrahim, Ajay Kumar, and David Graves "Plasma characterization of Tetra III chrome etch system", Proc. SPIE 7488, Photomask Technology 2009, 74880L (6 November 2009); https://doi.org/10.1117/12.833490

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KEYWORDS

Plasma

Ions

Electrodes

Etching

Argon

Chlorine

Plasma etching

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