Effect of post-sulfurization annealing and gallium grading on thinner CuIn1-xGaxS2 absorbers

Ashwani Kaul; Parag Vasekar; Shirish A. Pethe; Neelkanth G. Dhere

doi:10.1117/12.826464

20 August 2009 Effect of post-sulfurization annealing and gallium grading on thinner CuIn_1-xGa_xS₂ absorbers

Ashwani Kaul, Parag Vasekar, Shirish A. Pethe, Neelkanth G. Dhere

Author Affiliations +

Proceedings Volume 7409, Thin Film Solar Technology; 740913 (2009) https://doi.org/10.1117/12.826464
Event: SPIE Solar Energy + Technology, 2009, San Diego, California, United States

Abstract

Thinner CuIn_1-xGa_xS₂ (CIGS2) solar cells are being prepared with an aim to reduce the consumption of indium and gallium. Post-sulfurization annealing is being used to enhance the grain size in order to overcome the problem of very small grains that tend to form in thinner films that are not desirable for device quality solar cells. Based on the fact that gallium gradient that is typically found in CIGS and CIGS2 solar cells has beneficial effect on preventing back contact recombination of minority carriers, an attempt to determine the optimum regime for post-sulfurization annealing is made to derive the benefits from larger grains and gallium gradient. An initial set of experiments carried out at PV materials laboratory at FSEC has shown encouraging results with cell efficiencies of 9-10% for thinner (1.2-1.6 μm) films.

Citation Download Citation

Ashwani Kaul, Parag Vasekar, Shirish A. Pethe, and Neelkanth G. Dhere "Effect of post-sulfurization annealing and gallium grading on thinner CuIn_1-xGa_xS₂ absorbers", Proc. SPIE 7409, Thin Film Solar Technology, 740913 (20 August 2009); https://doi.org/10.1117/12.826464

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