Paper
6 May 2009 VLW IRFPAs made from HgCdTe grown by MOVPE
L. G. Hipwood, C. L. Jones, C. Maxey, D. Walker, J. Fitzmaurice, P. Abbott, N. Shorrocks, P. Knowles
Author Affiliations +
Abstract
Selex Sensors and Airbourne Systems has been active in developing Very Long Wave arrays for space applications under a contract of the European Space Agency. Arrays have been demonstrated with a 15 μm cut-off operating at 55 K. The technology is an extension of our standard LW, described elsewhere, using MOVPE layers grown on GaAs to provide a low cost, large area capability with state-of-the-art performance. The test vehicle for the VLW development is a direct injection 320 x 256, 30 μm pitch ROIC with a well capacity of 20 million electrons. While it may be considered that direct injection is not ideal for typical diode impedances expected in the VLW, and alternatives are in design, it is a testament to our technology that the diodes have sufficient dynamic resistance to allow this approach. Our diode design provides low diffusion currents such that at these operating temperatures the arrays are largely limited by trap assisted tunnelling (TAT). Results of dark current as a function of voltage and temperature will be presented along with the array electro-optical performance.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. G. Hipwood, C. L. Jones, C. Maxey, D. Walker, J. Fitzmaurice, P. Abbott, N. Shorrocks, and P. Knowles "VLW IRFPAs made from HgCdTe grown by MOVPE", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 729822 (6 May 2009); https://doi.org/10.1117/12.817817
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Diodes

Mercury cadmium telluride

Resistance

Diffusion

Gallium arsenide

Heterojunctions

Sensors

RELATED CONTENT


Back to Top