Test structures for 40 nm design rule evaluation

Jonathan Ho; Yan Wang; Benjamin Lin

doi:10.1117/12.813448

12 March 2009 Test structures for 40 nm design rule evaluation

Jonathan Ho, Yan Wang, Benjamin Lin

Proceedings Volume 7275, Design for Manufacturability through Design-Process Integration III; 72750T (2009) https://doi.org/10.1117/12.813448
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

As the process development advances to deep sub-100 nm technology, many new technologies such as immersion lithography and hyper NA lens design are developed for the improved on-wafer pattern resolution to meet the technology requirement. During the early process development such as 45 nm technology, it was not clear that lithography tool could meet stringent CD variation requirement. Many rules such as fixed poly pitch, single poly orientation, and dummy poly insertion for diffusion edge transistors were implemented [1, 2] to ensure that, with designated litho-tool, the CD variation control could be minimized. These rules generally added layout design complexity and area penalty. It would be efficient that these rules could be evaluated and properly implemented with data collected from well-design test structures. In this work, a set of simple test structures with various dummy poly gate lengths and numbers of dummy poly gates, and fix-pitch poly gate orientations were implemented in the process development test vehicles (TV's). Electrical, simulation, and in-line CD data of these test structures were collected. Analysis of the data and related design rule optimization and implementation are described. This work helped to optimize and to properly implement the 45 nm gate poly design rules during early process development for Xilinx FPGA product development.

Citation Download Citation

Jonathan Ho, Yan Wang, and Benjamin Lin "Test structures for 40 nm design rule evaluation", Proc. SPIE 7275, Design for Manufacturability through Design-Process Integration III, 72750T (12 March 2009); https://doi.org/10.1117/12.813448

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