Incorporating organosilanes into EUV photoresists: diphenyltrimethylsilylmethylsulfonium triflate as a new PAG

Shalini Sharma; Yoichi Ogata; Clarion Tung; James M. Blackwell; Todd R. Younkin; Yoshi Hishiro; Joshua S. Figueroa; Arnold L. Rheingold

doi:10.1117/12.814220

1 April 2009 Incorporating organosilanes into EUV photoresists: diphenyltrimethylsilylmethylsulfonium triflate as a new PAG

Shalini Sharma, Yoichi Ogata, Clarion Tung, James M. Blackwell, Todd R. Younkin, Yoshi Hishiro, Joshua S. Figueroa, Arnold L. Rheingold

Author Affiliations +

Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 72733N (2009) https://doi.org/10.1117/12.814220
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

The synthesis and characterization data for a new sulfonium photoacid generator (PAG), diphenyltrimethylsilylmethylsulfonium triflate (I), is reported. It is shown that the molecule undergoes rapid silyl group transfer to water or phenol in the presence of a strong, nucleophilic base such as trioctylamine (TOA). The resulting PAG, diphenyl-methylsulfonium triflate (II), is subsequently degraded by TOA via methyl group transfer from S to N leading to the formation of Ph2S and methyltriocylammonium triflate. Both I and II are stable when non-nucleophilic base quenchers are used. Dose-to-clear and patterning results obtained from EUV exposures at Intel-MET are presented, illustrating that increased sensitivity can be obtained with PAGs I and II relative to triphenylsulfonium triflate (TPSOTf), but that LWR is compromised.

Citation Download Citation

Shalini Sharma, Yoichi Ogata, Clarion Tung, James M. Blackwell, Todd R. Younkin, Yoshi Hishiro, Joshua S. Figueroa, and Arnold L. Rheingold "Incorporating organosilanes into EUV photoresists: diphenyltrimethylsilylmethylsulfonium triflate as a new PAG", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72733N (1 April 2009); https://doi.org/10.1117/12.814220

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