Molecular glass resists for next-generation lithography

Marie Krysak; Anuja De Silva; Jing Sha; Jin-Kyun Lee; Christopher K. Ober

doi:10.1117/12.814147

1 April 2009 Molecular glass resists for next-generation lithography

Marie Krysak, Anuja De Silva, Jing Sha, Jin-Kyun Lee, Christopher K. Ober

Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 72732N (2009) https://doi.org/10.1117/12.814147
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

The semiconductor industry is pushing the limits of resolution to sub-30nm through the extension of 193nm lithography as well as next generation techniques such as EUV lithography. Molecular glass photoresists may provide enhanced resolution and performance advantages compared to traditional polymeric resists. These organic compounds have a low molecular weight but still display high glass transition temperatures (Tgs). Enhanced design aspects are employed to give beneficial resist properties such as transparency, high Tg and etch resistance. Asymmetrical, rigid structures are used to create amorphous structures with high Tg molecular glasses, such as branched structures and carborane inclusion complexes. Alicyclic cyclodextrin ring compounds have also been employed for 193nm lithography. Unconventional atoms such as boron have been incorporated to increase etch resistance while supercritical CO₂ was employed as an environmentally friendly solvent free developer. Exploring structural aspects and their effect on resist performance is important in the design of new molecules for next generation lithography and will be discussed.

Citation Download Citation

Marie Krysak, Anuja De Silva, Jing Sha, Jin-Kyun Lee, and Christopher K. Ober "Molecular glass resists for next-generation lithography", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72732N (1 April 2009); https://doi.org/10.1117/12.814147

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