Stochastic modeling in lithography: the use of dynamical scaling in photoresist development

Chris A. Mack

doi:10.1117/12.815379

1 April 2009 Stochastic modeling in lithography: the use of dynamical scaling in photoresist development

Chris A. Mack

Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 72732I (2009) https://doi.org/10.1117/12.815379
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

The concepts of dynamical scaling in the study of kinetic roughness are applied to the problem of photoresist development. Uniform, open-frame exposure and development of photoresist corresponds to the problem of quenched noise and the etching of random disordered media and is expected to fall in the Kadar-Parisi-Zhang (KPZ) universality class. To verify this expectation, simulations of photoresist development in 1+1 dimensions were carried out with random, uncorrelated noise added to an otherwise uniform development rate. The resulting roughness exponent α and the growth exponent β were found to match the 1+1 KPZ values exactly.

Citation Download Citation

Chris A. Mack "Stochastic modeling in lithography: the use of dynamical scaling in photoresist development", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72732I (1 April 2009); https://doi.org/10.1117/12.815379

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