Paper
30 December 2008 Preconcentrator-based sensor µ-system for low-level benzene detection
P. Ivanov, I. Gràcia, F. Blanco, J.-P. Raskin, R. Cumeras, N. Sabaté, X. Vilanova, X. Correig, L. Fonseca, E. Figueras, J. Santander, C. Cané
Author Affiliations +
Proceedings Volume 7268, Smart Structures, Devices, and Systems IV; 72680S (2008) https://doi.org/10.1117/12.807433
Event: SPIE Smart Materials, Nano- and Micro-Smart Systems, 2008, Melbourne, Australia
Abstract
In this paper, a preconcentrator-based sensor &mgr;-system for low level benzene detection is presented. It consists of a spiral-shaped &mgr;-reconcentrator with dimensions of 10cm × 300&mgr;m × 300&mgr;m, followed by a &mgr;-hotplate sensor matrix. The &mgr;-preconcentrator was fabricated on a silicon wafer by means of DRIE and anodic bonding techniques. To obtain the concentration factor of the fabricated devices, a GC/MS: Shimadzu-QP5000 equipment was used. The results obtained showed excellent repeatability and preconcentration factors up to 286. A considerable improvement (1500%) in the sensor responses was achieved with Pd doped SnO2 sensors. The small size of the manufactured devices enables their incorporation in an integrated GC/MS gas sensor system.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Ivanov, I. Gràcia, F. Blanco, J.-P. Raskin, R. Cumeras, N. Sabaté, X. Vilanova, X. Correig, L. Fonseca, E. Figueras, J. Santander, and C. Cané "Preconcentrator-based sensor µ-system for low-level benzene detection", Proc. SPIE 7268, Smart Structures, Devices, and Systems IV, 72680S (30 December 2008); https://doi.org/10.1117/12.807433
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KEYWORDS
Sensors

Gas sensors

Silicon

Fabrication

Deep reactive ion etching

Palladium

Optical lithography

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