Exposure tool for 32-nm lithography: requirements and development progress

Andrew J. Hazelton; Jun Ishikawa; Nobutaka Magome

doi:10.1117/12.804647

4 December 2008 Exposure tool for 32-nm lithography: requirements and development progress

Andrew J. Hazelton, Jun Ishikawa, Nobutaka Magome

Proceedings Volume 7140, Lithography Asia 2008; 714028 (2008) https://doi.org/10.1117/12.804647
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan

Abstract

Double patterning is recognized as the best candidate for 32 nm half-pitch lithography. Currently pitch splitting processes are being considered for logic processes and spacer processes are being considered for memory. In pitch splitting, errors in overlay between the first and second exposure become CD errors on the final pattern. For this reason, overlay requirements are severe for pitch splitting double patterning. Revised CD and overlay budgets are presented, as well as technical requirements to satisfy these budgets. Spacer processes do not have similar restrictions on overlay, so they can be achieved using current immersion tools. Exposure tool requirements for double patterning are discussed and modifications to current platforms are described.

Citation Download Citation

Andrew J. Hazelton, Jun Ishikawa, and Nobutaka Magome "Exposure tool for 32-nm lithography: requirements and development progress", Proc. SPIE 7140, Lithography Asia 2008, 714028 (4 December 2008); https://doi.org/10.1117/12.804647

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