Paper
9 September 2008 Effects of non parabolic bands on nanostructure laser devices
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Abstract
Most material systems have parabolic band structures at the band edge, however away from the band edge the bands are strongly non parabolic. Other material systems are strongly parabolic at the band edge such as IV-VI lead salt semiconductors. The effects of this property can be ignored for bulk material and structures. However, we will show that its effect can't be ignored in the nanoscale range and it is important to calculate for and take into consideration the effects of this unique property in any design and analysis. Based on the energy dependent effective mass, a theoretical model was developed to conduct this study on several lead salt (IV-VI) laser nanostructures in the infrared region. The effects of non-parabolicity on the gain versus current density relation are a reduction in the current density needed for any given gain and an increase in the gain saturation level. The non-parabolicity of the bands in the growth direction lowers the values of the confinement factor relative to parabolic bands which in turn lowers the modal gain values. Finally, the effects of non-parabolicity on the threshold current are significant for short cavity lasers and decrease with an increase in the cavity length.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Khodr "Effects of non parabolic bands on nanostructure laser devices", Proc. SPIE 7039, Nanoengineering: Fabrication, Properties, Optics, and Devices V, 70390T (9 September 2008); https://doi.org/10.1117/12.797569
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Cited by 1 scholarly publication.
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KEYWORDS
Quantum wells

Electrons

Lead

Nanostructures

Laser damage threshold

Refraction

Semiconductors

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