Wafer level CD metrology on photomasks using aerial imaging technology

Thomas Scherübl; Ulrich Strößner; Holger Seitz; Robert Birkner; Rigo Richter

doi:10.1117/12.793102

19 May 2008 Wafer level CD metrology on photomasks using aerial imaging technology

Thomas Scherübl, Ulrich Strößner, Holger Seitz, Robert Birkner, Rigo Richter

Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70282W (2008) https://doi.org/10.1117/12.793102
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan

Abstract

Recently more and more mask designs for critical layers involve strong OPC which increases the complexity for standard CD SEM mask measurements and conclusive interpretation of results. For wafer printing the wafer level CD is the crucial measure if the mask can be successfully used in production. Recent developments in the AIMS^TM software have enabled the user to use the tool for wafer level CD metrology under scanner conditions. The advantage of this methodology is that AIMS^TM does see the CD with scanner eyes. All lithographic relevant effects like OPC imaging which can not be measured by other tools like mask CD SEM will be captured optically by the AIMS^TM principle. Therefore, measuring the CD uniformity of the mask by using AIMS^TM will lead to added value in mask metrology. With decreasing feature sizes the requirements for CD metrology do increase. In this feasibility study a new prototype algorithm for measuring the lithographically relevant AIMS^TM CD with sub pixel accuracy has been tested. It will be demonstrated that by using this algorithm line edge and line width roughness can be measured accurately by an AIMS^TM image. Furthermore, CD repeatability and tool matching results will be shown.

Citation Download Citation

Thomas Scherübl, Ulrich Strößner, Holger Seitz, Robert Birkner, and Rigo Richter "Wafer level CD metrology on photomasks using aerial imaging technology", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70282W (19 May 2008); https://doi.org/10.1117/12.793102

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