PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Dry resistless process was studied of mask image formation by electron beam deposition from hydrocarbon
precursor undecane (C11H24) on substrates of SiO2 (layer 80 nm) on silicon and cupper (layer 430 nm) on silicon. A
mask in form of grating of 5-150 nm height strips was created in a cell introduced into the scanning electron microscope
CamScan. Strips thickness δ was considerably more than the beam size and depended on substrate material: for SiO2
δ=0.6 μm, for Cuδ=2 μm. Strong dependence of growth rate V (at Cu) on the line scan time τ was found out. At beam
current 1.0 nA varying τ from 20 ms to 13 s led to 7.4 times decreasing V. This effect most likely is caused by
significant diffusion delays at τ=13 s in precursor transport into reaction zone during the pixel time. The ion beam
etching of substrates through the deposited mask was carried out. SiO2 substrate was etched by SF6 ions, Cu substrate
was etched by Ar ions. In both cases etching rate of mask material were close to etching rate of substrate. In mask
deposited on SiO2 thin (about 1 nm) intermediate surface layer was found having significantly more (8-10 times)
etching resistance than the basic mask material.
M. A. Bruk,E. N. Zhikharev,S. L. Shevchuk,I. A. Volegova,A. V. Spirin,E. N. Teleshov,V. A. Kalnov, andYu. P. Maishev
"Mask image formation by electron beam deposition from vapor phase", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702508 (29 April 2008); https://doi.org/10.1117/12.802355
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
M. A. Bruk, E. N. Zhikharev, S. L. Shevchuk, I. A. Volegova, A. V. Spirin, E. N. Teleshov, V. A. Kalnov, Yu. P. Maishev, "Mask image formation by electron beam deposition from vapor phase," Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702508 (29 April 2008); https://doi.org/10.1117/12.802355